DOPING DEPENDENT PHOTOELECTROCHEMICAL ETCHING OF GAAS HETEROSTRUCTURES

被引：0
|
作者：
KHARE, R [1 ]
HU, EL [1 ]
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 07期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：9 / 10
页数：2
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