共 50 条
- [22] CATHODOLUMINESCENCE OF HEAVILY DOPED N-TYPE INDIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (08): : 853 - 856
- [23] PLASMA OSCILLATIONS IN HEAVILY DOPED N-TYPE SILICON PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 84 (5371): : 25 - &
- [24] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE GERMANIUM PHYSICAL REVIEW, 1962, 125 (06): : 1965 - &
- [25] NEGATIVE MAGNETORESISTANCE OF HEAVILY DOPED N-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (07): : 915 - +
- [30] INFLUENCE OF HEAT TREATMENT ON ELECTRICAL PROPERTIES OF HEAVILY DOPED N-TYPE GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (07): : 813 - &