NOTFET - A HIGH-FREQUENCY INP NONLINEAR TRANSISTOR

被引：3
|
作者：
MAJIDIAHY, R
BANDY, S
CHING, LY
GLENN, M
NISHIMOTO, C
WENG, SL
ZDASIUK, G
机构：
[1] Electron Physics Laboratory, Varian Research Center, Palo Alto
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 12期
关键词：
D O I：
10.1109/55.63046
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the development of a new device, called a nonlinearly optimized transconductance field-effect transistor (NOTFET), for nonlinear circuit applications. An InP NOTFET with two gm peaks was designed, fabricated, and tested for odd and even harmonic generation up to 12 GHz, to demonstrate the device concept and its advantages compared to conventional FET's. © 1990 IEEE
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页码：582 / 584
页数：3
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