RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS

被引：193
|
作者：
GRUNTHANER, FJ
GRUNTHANER, PJ
MASERJIAN, J
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 06期
关键词：
D O I：
10.1109/TNS.1982.4336387
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1462 / 1466
页数：5
相关论文
共 50 条
  • [21] Differential charging in SiO2/Si system as determined by XPS
    Karadas, F
    Ertas, G
    Suzer, S
    JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (04): : 1515 - 1518
  • [22] RADIATION-INDUCED INTERFACE TRAPS IN MO/SIO2/SI CAPACITORS
    NISHIOKA, Y
    DASILVA, EF
    MA, TP
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) : 1166 - 1171
  • [23] STRUCTURE AND MECHANISM OF FORMATION OF DRAWING- OR RADIATION-INDUCED DEFECTS IN SiO2:GeO OPTICAL FIBER.
    Watanabe, Yuichi
    Kawazoe, Hiroshi
    Shibuya, Kiyoshi
    Muta, Ken-ichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (03): : 425 - 431
  • [24] Fluence evolution of defects in α-SiO2 determined by ionoluminescence
    Szilagyi, E.
    Pal, M. K.
    Kotai, E.
    Zolnai, Z.
    Banyasz, I.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2024, 555
  • [25] ION IMPLANTATION-INDUCED AND RADIATION-INDUCED STRUCTURAL MODIFICATIONS IN AMORPHOUS SIO2
    DEVINE, RAB
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 152 (01) : 50 - 58
  • [26] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES
    MCLEAN, FB
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1651 - 1657
  • [27] Sn+-implantation and radiation-induced structural modifications in amorphous SiO2
    Angermann, T
    Dunken, HH
    BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1996, 100 (09): : 1535 - 1538
  • [28] TOWARD A MODEL OF RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES
    MCLEAN, FB
    BOESCH, HE
    WINOKUR, PS
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 219 - 219
  • [29] XPS studies of the Si/SiO2 interface with synchrotron radiation
    Rochet, F
    Jolly, F
    Dufour, G
    Grupp, C
    Taleb-Ibrahimi, A
    STRUCTURE AND ELECTRONIC PROPERTIES OF ULTRATHIN DIELECTRIC FILMS ON SILICON AND RELATED STRUCTURES, 2000, 592 : 51 - 62
  • [30] RADIATION-INDUCED INTERFACE-STATE GENERATION IN REOXIDIZED NITRIDED SIO2
    RAO, VR
    VASI, J
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) : 1029 - 1031
12345