EPITAXIAL LAYERS OF InP DOPED WITH RARE ELEMENTS FOR USE IN RADIATION DETECTOR

被引：0
|
作者：
Kozak, H. [1 ]
Sopko, B. [1 ]
Zdansky, K. [2 ]
机构：
[1] Czech Tech Univ, Dept Phys, Tech 4, CZ-16607 Prague 6, Czech Republic
[2] Acad Sci Czech Republ, Inst Radio Engn & Elect, CR-18251 Prague, Czech Republic
来源：
ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING | 2007年 / 6卷 / 01期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have focused on the investigation of the impact of Ce, Eu, Tm, Eu2O3 and Tm2O3 addition in LPE growth process on the properties of InP layers in the context of their application in detector structures.
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页码：16 / 18
页数：3
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