INFLUENCE OF HOPPING MOTION OF ELECTRONS ON EPR SPECTRUM OF PHOSPHORUS IN HEAVILY DOPED N-TYPE SILICON

被引：0

|

作者：

ZHURKIN, BG

PENIN, NA

SWARUP, P

机构：

来源：

SOVIET PHYSICS SOLID STATE,USSR | 1967年 / 8卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：2839 / +

页数：1

相关论文

共 50 条

[11] INFLUENCE OF HEAT TREATMENT ON ELECTRICAL PROPERTIES OF N-TYPE SILICON HEAVILY DOPED WITH OXYGEN
KURILO, PM
SEITOV, E
KHITREN, MI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 1953 - &
[12] INFLUENCE OF CONCENTRATION OF DONORS AND ACCEPTORS ON ELECTRICAL CONDUCTIVITY OF HEAVILY DOPED N-TYPE SILICON
PENIN, NA
ZHURKIN, BG
VOLKOV, BA
SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (11): : 2580 - +
[13] IMPURITY EFFECTS ON CONDUCTION IN HEAVILY DOPED N-TYPE SILICON
FINETTI, M
MAZZONE, AM
JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4597 - 4600
[14] Some transport coefficients in heavily doped n-type silicon
Elfagd, Y
Workalemahu, B
Sharma, SK
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 227 (02): : 549 - 555
[15] ORBACH RELAXATION PROCESS IN HEAVILY DOPED N-TYPE SILICON
OCHIAI, Y
MATSUURA, E
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (02): : K109 - K112
[16] MEASUREMENT OF HOLE MOBILITY IN HEAVILY DOPED N-TYPE SILICON
SWIRHUN, SE
DELALAMO, JA
SWANSON, RM
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 168 - 173
[17] PIEZORESISTANCE AND MAGNETIC SUSCEPTIBILITY IN HEAVILY DOPED N-TYPE SILICON
SASAKI, W
KINOSHITA, J
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1968, 25 (06) : 1622 - +
[18] The potential of heavily doped n-type silicon in plasmonic sensors
Das Joy, Joyonta
Rahman, Md. Shakibur
Rahad, Rummanur
Chowdhury, Mehdi Hasan
MEASUREMENT, 2025, 242
[19] Experimental Characterization of the Influence of Transverse Prestrain on the Piezoresistive Coefficients of Heavily Doped n-Type Silicon
Balbola, Amr A.
Kayed, Mohammed O.
Moussa, Walied A.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (11) : 5002 - 5008
[20] DIFFUSION OF BORON IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON
WILLOUGHBY, AFW
EVANS, AGR
CHAMP, P
YALLUP, KJ
GODFREY, DJ
DOWSETT, MG
JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) : 2392 - 2397

← 1 2 3 4 5 →