ROENTGENOLUMINESCENT AND THERMOLUMINESCENT EVIDENCE OF EXCITON AUTOLOCALIZATION IN Y2O3 AND BETA-GA2O3

被引:0
|
作者
KUZNETSOV, AI
ABRAMOV, VN
UIBO, TV
机构
来源
OPTIKA I SPEKTROSKOPIYA | 1985年 / 58卷 / 03期
关键词
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:603 / 606
页数:4
相关论文
共 50 条
  • [31] IR ABSORPTION IN THO2-DOPED Y2O3/ Y2O3
    HARRINGTON, JA
    GRESKOVICH, C
    JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) : 1585 - 1588
  • [32] Exciton-phonon interaction in Y2O3 and Sc2O3 thin films
    Bordun, O.M.
    Bordun, I.M.
    Journal of Applied Spectroscopy, 1999, 66 (01): : 141 - 143
  • [33] Exciton-phonon interaction in Y2O3 and Sc2O3 thin films
    O. M. Bordun
    I. M. Bordun
    Journal of Applied Spectroscopy, 1999, 66 (1) : 141 - 143
  • [34] Infiltration of Al2O3/Y2O3 and AlN/Y2O3 mixes into SiC preforms
    Taguchi, S. P.
    Ribeiro, S.
    Balestra, R. M.
    Rodrigues, D., Jr.
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2007, 454 : 24 - 29
  • [35] Gigahertz range absorption properties of α-Fe/Y2O3, FeCo/Y2O3, and α-Fe/Fe3B/Y2O3
    Machida, K
    Liu, JR
    Itoh, M
    IEEE TRANSACTIONS ON MAGNETICS, 2005, 41 (10) : 3577 - 3579
  • [36] Anisotropy of electrical and optical properties in beta-Ga2O3 single crystals
    Ueda, N
    Hosono, H
    Waseda, R
    Kawazoe, H
    APPLIED PHYSICS LETTERS, 1997, 71 (07) : 933 - 935
  • [37] EVIDENCE FOR 2 SYMMETRY SITES IN Y2O3 - EU+3
    FOREST, H
    BAN, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : C64 - &
  • [38] Effect of Precipitants and Precipitation Conditions on Synthesis of beta-Ga2O3 Powder
    Hwang, Su Hyun
    Choi, Young Jong
    Ko, Jeong Hyun
    Kim, Tae Jin
    Il Jeon, Deok
    Cho, Woo Suk
    Han, Kyu Sung
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2014, 24 (04): : 214 - 220
  • [39] Thermal stability and annealing of intrinsic point defects in beta-Ga2O3
    Alessi, A.
    Lin, J.
    Safarov, V. I.
    Drouhin, H. -j.
    Vega, L. Romero
    Cavani, O.
    Grasset, R.
    Jaffres, H.
    Konczykowski, M.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 188
  • [40] DEFECT-ANNEALING IN NEUTRON-DAMAGED BETA-GA2O3
    COJOCARU, LN
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (03): : 157 - 160