NONVOLATILE MEMORIES-STATUS AND EMERGING TRENDS

被引：3

作者：

MELANOTTE, M

BEZ, R

CRISENZA, G

机构：

[1] SGS-THOMSON Microelectronics, Central R and D Technology, 20041 Agrate Brianza, MI

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 15卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90293-M

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Actual scenario and new trends in non volatile memories are presented, considering market, applications, scaling requirements, reliability and manufacturability constrains. EPROM and Flash-EEPROM are particularly reviewed, as the devices better representing speed and density progress, the two leading aspects along non volatile memories (NVM) evolution.

引用

页码：603 / 612

页数：10

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