NONVOLATILE MEMORIES-STATUS AND EMERGING TRENDS

被引：3
|
作者：
MELANOTTE, M
BEZ, R
CRISENZA, G
机构：
[1] SGS-THOMSON Microelectronics, Central R and D Technology, 20041 Agrate Brianza, MI
来源：
MICROELECTRONIC ENGINEERING | 1991年 / 15卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(91)90293-M
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Actual scenario and new trends in non volatile memories are presented, considering market, applications, scaling requirements, reliability and manufacturability constrains. EPROM and Flash-EEPROM are particularly reviewed, as the devices better representing speed and density progress, the two leading aspects along non volatile memories (NVM) evolution.
引用
收藏
页码：603 / 612
页数：10
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