ELECTRONIC-STRUCTURE OF TISI2

被引：49
|
作者：
MATTHEISS, LF
HENSEL, JC
机构：
来源：
PHYSICAL REVIEW B | 1989年 / 39卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.39.7754
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：7754 / 7759
页数：6
相关论文
共 50 条
  • [31] Tuning interfacial two-component superconductivity in CoSi2/TiSi2 heterojunctions via TiSi2 diffusivity
    Chiu, Shao-Pin
    Mishra, Vivek
    Li, Yu
    Zhang, Fu-Chun
    Kirchner, Stefan
    Lin, Juhn-Jong
    NANOSCALE, 2023, 15 (20) : 9179 - 9186
  • [32] TiSi2 nanostructures -: enhanced conductivity at nanoscale?
    Enyashin, Andrey N.
    Gemming, Sibylle
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (10): : 3593 - 3600
  • [33] MODELING OF THE FORMATION OF TISI2 IN A NITROGEN AMBIENT
    JONGSTE, JF
    PRINS, FE
    JANSSEN, GCAM
    RADELAAR, S
    APPLIED SURFACE SCIENCE, 1989, 38 (1-4) : 57 - 61
  • [34] MORPHOLOGICAL DEGRADATION OF TISI2 ON (100)SILICON
    REVESZ, P
    ZHENG, LR
    HUNG, LS
    MAYER, JW
    APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1591 - 1593
  • [35] DIFFUSION OF SB, GA, GE, AND (AS) IN TISI2
    GAS, P
    SCILLA, G
    MICHEL, A
    LEGOUES, FK
    THOMAS, O
    DHEURLE, FM
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) : 5335 - 5345
  • [36] TiSi2 phase transformation by amorphization techniques
    Karlin, T
    Samuelsson, M
    Nygren, S
    Ostling, M
    THIN FILMS - STRUCTURE AND MORPHOLOGY, 1997, 441 : 283 - 288
  • [37] Morphological stability of TiSi2 on polycrystalline silicon
    Chen, JF
    Chen, LJ
    THIN SOLID FILMS, 1997, 293 (1-2) : 34 - 39
  • [38] THERMODYNAMIC AND EXPERIMENTAL STUDIES OF THE APCVD OF TISI2
    MILLIONBRODAZ, JF
    VAHLAS, C
    BERNARD, C
    TORRES, J
    MADAR, R
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1987, 42 (236): : 191 - 194
  • [39] LOW-TEMPERATURE NITRIDATION OF TISI2
    MANN, R
    BAXTER, R
    TICE, W
    FRIDMANN, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C451 - C451
  • [40] Sputter deposition and characterization of TiB2/TiSi2 bilayer contact structure
    Sade, G
    Pelleg, J
    MICROELECTRONIC ENGINEERING, 1997, 37-8 (1-4) : 535 - 541
12345