EXTREMELY LOW THRESHOLD CURRENT ALGAAS BURIED-HETEROSTRUCTURE QUANTUM-WELL LASERS GROWN BY LIQUID-PHASE EPITAXY

被引：13
|
作者：
ALFEROV, ZI [1 ]
ANDREYEV, VM [1 ]
MEREUTZA, AZ [1 ]
SYRBU, AV [1 ]
YAKOVLEV, VP [1 ]
机构：
[1] KISHINEV POLYTECH INST,KISHINEV 277012,MOLDAVIA,USSR
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 27期
关键词：
D O I：
10.1063/1.103762
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Data are presented on AlGaAs single quantum well buried-heterostructure lasers grown by two-step liquid phase epitaxy (LPE). The base laser structures were grown by low-temperature LPE in the temperature interval of 600-400-degrees-C. Broad-area threshold current densities of 300 A/cm2 were measured for 1-mm-long lasers. The buried heterostructure was formed in the second LPE process including in situ selective mesa melt etching. Threshold currents 1.3 mA in a continuous regime were obtained for uncoated lasers having 125-mu-m-long cavities.
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页码：2873 / 2875
页数：3
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