SI O COMPOUND FORMATION BY OXYGEN ION-IMPLANTATION INTO SILICON

被引：21
|
作者：
HENSEL, E
WOLLSCHLAGER, K
KREISSIG, U
SKORUPA, W
FINSTER, J
SCHULZE, D
机构：
[1] ACAD SCI GDR,ZENT INST KERNFORSCH,DDR-8051 DRESDEN,GER DEM REP
[2] KARL MARX UNIV,SEKT CHEM,DDR-7010 LEIPZIG,GER DEM REP
来源：
SURFACE AND INTERFACE ANALYSIS | 1985年 / 7卷 / 05期
关键词：
D O I：
10.1002/sia.740070502
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
20
引用
收藏
页码：207 / 210
页数：4
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