MODEL OF RESIDUAL PHOTOCONDUCTIVITY - GALLIUM-ARSENIDE

被引：0

|

作者：

DOBREGO, VP ^{[1
]}

机构：

[1] VI LENIN STATE UNIV,MINSK,BESSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 8卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1309 / 1310

页数：2

相关论文

共 50 条

[21] SUBMILLIMETER PHOTOCONDUCTIVITY OF EPITAXIAL GALLIUM-ARSENIDE CONTAINING ISOVALENT SB IMPURITIES
BERMAN, LV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (09): : 1004 - 1007
[22] GALLIUM DIFFUSION IN GALLIUM-ARSENIDE
PALFREY, HD
WILLOUGHBY, AFW
BROWN, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C93 - C93
[23] INFRARED CHARACTERIZATION OF AN EPITAXIAL FILM OF GALLIUM-ARSENIDE ON A GALLIUM-ARSENIDE SUBSTRATE
PALIK, ED
HOLM, RT
GIBSON, JW
THIN SOLID FILMS, 1977, 47 (02) : 167 - 175
[24] PHOTOREFLECTANCE OF GALLIUM-ARSENIDE
MARONCHUK, YE
SHERSTYAKOV, AP
TOKAREV, AS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (03): : 386 - 389
[25] GALLIUM-ARSENIDE IN JAPAN
MORTENSEN, P
ELECTRONICS AND POWER, 1985, 31 (02): : 115 - 118
[26] GALLIUM-ARSENIDE ISSUE
BOWSER, M
BYTE, 1992, 17 (06): : 20 - 20
[27] GALLIUM-ARSENIDE DENDRITES
MOSS, RH
NICHOLSON, HC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (08) : C198 - C198
[28] GALLIUM-ARSENIDE ON SILICON
FAN, JCC
VLSI SYSTEMS DESIGN, 1987, 8 (13): : 80 - 81
[29] DIFFUSION OF ZINC IN GALLIUM-ARSENIDE - A NEW MODEL
GOSELE, U
MOREHEAD, F
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4617 - 4619
[30] DEFECTING TO GALLIUM-ARSENIDE
不详
SCIENCE NEWS, 1984, 125 (20) : 312 - 312

← 1 2 3 4 5 →