BASIC PROPERTIES OF ANODIZED POROUS SILICON FORMED UNDER UNIFORM CURRENT-DENSITY

被引：2
|
作者：
AOYAGI, H
MOTOHASHI, A
KINOSHITA, A
AONO, T
SATOH, A
机构：
[1] TOKYO DENKI UNIV,FAC ENGN,TOKYO 101,JAPAN
[2] FUJIKURA LTD,TOKYO 135,JAPAN
来源：
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS | 1994年 / 77卷 / 04期
关键词：
ANODIZED SILICON; POROUS STRUCTURE; HARDNESS; SELF-STANDING LIMIT; CYLINDRICAL MODEL;
D O I：
10.1002/ecjb.4420770411
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Porous silicon is formed by anodization of single crystalline silicon under various current densities and HF concentrations which are the important parameters for anodization. Anodization is carried out in HF solution at constant temperature under a constant current density distribution. This paper describes the fabrication process dependencies of dissolution valence, porosity, and layer formation efficiency which are related directly to the anodization conditions. In addition, the mechanical strength of porous silicon obtained by the hardness measurement was related to the self-standing limit of porous silicon obtained by a cylindrical model for pores arranged in the two-dimensional lattice.
引用
收藏
页码：97 / 105
页数：9
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