COMBINED EFFECTS OF HOT-CARRIER STRESSING AND IONIZING-RADIATION IN SIO2, NO, AND ONO MOSFETS

被引：9
|
作者：
DAS, NC [1 ]
NATHAN, V [1 ]
DACUS, S [1 ]
CABLE, J [1 ]
机构：
[1] TRW CO INC, MICROELECTR RES CTR, REDONDO BEACH, CA 90278 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 01期
关键词：
D O I：
10.1109/55.215093
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
N-channel MOSFET's with different gate dielectrics, such as silicon dioxide, silicon dioxide annealed in nitrous oxide (NO), and reoxidized nitrided oxide (ONO) were first hot-carrier (HC) stressed and then irradiated to a total dose of 1.5 Mrd. For equal substrate current stressing NO devices have the least degradation, whereas the threshold voltage (V(t)) shift due to irradiation is maximum for these devices. For all three types of gate dielectrics the V(t) shift due to irradiation of HC stressed devices was higher than that of the unstressed device. However, for ONO devices the V(t) shift due to irradiation of the hot-electron (HE) stressed (stressing with V(d) = V(g) = 6.5 V) device was less than that of the unstressed device.
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页码：40 / 42
页数：3
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