首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
ROOM-TEMPERATURE OPERATION OF UNIPOLAR HOT-ELECTRON TRANSISTORS
被引:8
|
作者
:
LEVI, AFJ
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,HOLMDEL,NJ 07733
AT&T BELL LABS,HOLMDEL,NJ 07733
LEVI, AFJ
[
1
]
CHIU, TH
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,HOLMDEL,NJ 07733
AT&T BELL LABS,HOLMDEL,NJ 07733
CHIU, TH
[
1
]
机构
:
[1]
AT&T BELL LABS,HOLMDEL,NJ 07733
来源
:
SOLID-STATE ELECTRONICS
|
1988年
/ 31卷
/ 3-4期
关键词
:
D O I
:
10.1016/0038-1101(88)90356-5
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:625 / 628
页数:4
相关论文
共 50 条
[21]
BALLISTIC TRANSPORT IN HOT-ELECTRON TRANSISTORS
XU, JM
论文数:
0
引用数:
0
h-index:
0
XU, JM
SHUR, M
论文数:
0
引用数:
0
h-index:
0
SHUR, M
JOURNAL OF APPLIED PHYSICS,
1987,
62
(09)
: 3816
-
3820
[22]
Corrugated infrared hot-electron transistors
Chen, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
Chen, CJ
Choi, KK
论文数:
0
引用数:
0
h-index:
0
机构:
Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
Choi, KK
Chang, WH
论文数:
0
引用数:
0
h-index:
0
机构:
Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
Chang, WH
Tsui, DC
论文数:
0
引用数:
0
h-index:
0
机构:
Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
Tsui, DC
APPLIED PHYSICS LETTERS,
1998,
73
(09)
: 1272
-
1274
[23]
HOT-ELECTRON TRANSISTORS GROWN BY MOCVD
KAWAI, H
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corp Research Cent, Japan
KAWAI, H
HASE, I
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corp Research Cent, Japan
HASE, I
IMANAGA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corp Research Cent, Japan
IMANAGA, S
KANEKO, K
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corp Research Cent, Japan
KANEKO, K
WATANABE, N
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corp Research Cent, Japan
WATANABE, N
SUPERLATTICES AND MICROSTRUCTURES,
1988,
4
(4-5)
: 545
-
549
[24]
HOT-ELECTRON ELECTROLUMINESCENCE IN GAAS TRANSISTORS
ZAPPE, HP
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY
FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY
ZAPPE, HP
SEMICONDUCTOR SCIENCE AND TECHNOLOGY,
1992,
7
(03)
: 391
-
400
[25]
TEMPERATURE-DEPENDENCE OF HOT-ELECTRON DEGRADATION IN BIPOLAR-TRANSISTORS
HUANG, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
MICHIGAN STATE UNIV,DEPT ELECT ENGN,E LANSING,MI 48824
HUANG, CJ
GROTJOHN, TA
论文数:
0
引用数:
0
h-index:
0
机构:
MICHIGAN STATE UNIV,DEPT ELECT ENGN,E LANSING,MI 48824
GROTJOHN, TA
SUN, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
MICHIGAN STATE UNIV,DEPT ELECT ENGN,E LANSING,MI 48824
SUN, CJ
REINHARD, DK
论文数:
0
引用数:
0
h-index:
0
机构:
MICHIGAN STATE UNIV,DEPT ELECT ENGN,E LANSING,MI 48824
REINHARD, DK
YU, CCW
论文数:
0
引用数:
0
h-index:
0
机构:
MICHIGAN STATE UNIV,DEPT ELECT ENGN,E LANSING,MI 48824
YU, CCW
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1993,
40
(09)
: 1669
-
1674
[26]
Optimization of high detectivity infrared hot-electron transistors at low temperature
Yao, J
论文数:
0
引用数:
0
h-index:
0
机构:
JDS Uniphase Corp, EPITAXX Div, W Trenton, NJ 08828 USA
JDS Uniphase Corp, EPITAXX Div, W Trenton, NJ 08828 USA
Yao, J
Choi, KK
论文数:
0
引用数:
0
h-index:
0
机构:
JDS Uniphase Corp, EPITAXX Div, W Trenton, NJ 08828 USA
Choi, KK
Tsui, DC
论文数:
0
引用数:
0
h-index:
0
机构:
JDS Uniphase Corp, EPITAXX Div, W Trenton, NJ 08828 USA
Tsui, DC
IEEE TRANSACTIONS ON ELECTRON DEVICES,
2001,
48
(07)
: 1318
-
1321
[27]
Room-temperature single-electron transistors using alkanedithiols
Luo, Kang
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Texas, Dept Phys, Austin, TX 78712 USA
Univ Texas, Dept Phys, Austin, TX 78712 USA
Luo, Kang
Chae, Dong-Hun
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Texas, Dept Phys, Austin, TX 78712 USA
Chae, Dong-Hun
Yao, Zhen
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Texas, Dept Phys, Austin, TX 78712 USA
Yao, Zhen
NANOTECHNOLOGY,
2007,
18
(46)
[28]
Electron energy relaxation in infrared hot-electron transistors
Choi, KK
论文数:
0
引用数:
0
h-index:
0
机构:
U.S. Army Research Laboratory, Physical Science Directorate, Fort Monmouth
Choi, KK
Tidrow, MZ
论文数:
0
引用数:
0
h-index:
0
机构:
U.S. Army Research Laboratory, Physical Science Directorate, Fort Monmouth
Tidrow, MZ
Chang, WH
论文数:
0
引用数:
0
h-index:
0
机构:
U.S. Army Research Laboratory, Physical Science Directorate, Fort Monmouth
Chang, WH
APPLIED PHYSICS LETTERS,
1996,
68
(03)
: 358
-
360
[29]
Electron energy relaxation in infrared hot-electron transistors
Appl Phys Lett,
3
(358):
[30]
SUPERCONDUCTOR-BASE HOT-ELECTRON TRANSISTORS
KOBAYASHI, T
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN
OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN
KOBAYASHI, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1987,
134
(8B)
: C427
-
C427
←
1
2
3
4
5
→