APPLICATION OF A LOW-PRESSURE RADIO-FREQUENCY DISCHARGE SOURCE TO POLYSILICON GATE ETCHING

被引：49
|
作者：
COOK, JM [1 ]
IBBOTSON, DE [1 ]
FLAMM, DL [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 01期
关键词：
D O I：
10.1116/1.584859
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1 / 4
页数：4
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