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CHARGE STORAGE PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS AND THE EFFECT OF INTERFACE STATES
被引:0
|
作者
:
HEZEL, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER
UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER
HEZEL, R
[
1
]
BAUCH, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER
UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER
BAUCH, W
[
1
]
机构
:
[1]
UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH 6,D-8520 ERLANGEN,FED REP GER
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1985年
/ 132卷
/ 08期
关键词
:
D O I
:
暂无
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:C350 / C350
页数:1
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