共 50 条
- [42] INFLUENCE OF THE COMPENSATION OF IMPURITIES ON ELECTRIC BREAKDOWN IN n-TYPE Ge. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (10): : 1315 - 1318
- [43] Measurement of the temperature dependence of pulse lengths in an n-type germanium detector EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2011, 56 (01):
- [44] RECOVERY OF LOW-TEMPERATURE ELECTRON-IRRADIATION-INDUCED DAMAGE IN N-TYPE GAAS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (03): : 375 - &
- [46] FAR-INFRARED RECOMBINATION RADIATION FROM N-TYPE GE AND GAAS PHYSICAL REVIEW B, 1974, 9 (10): : 4295 - 4305
- [47] PREPARATION OF THIN N-TYPE SILICON SPECIMENS FOR RADIATION DAMAGE STUDIES JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1969, 2 (01): : 19 - +