COMPARISON OF OPTICAL WAVE-GUIDE LOSSES IN SILICON-ON-INSULATOR

被引：21
|
作者：
ZINKE, T
FISCHER, U
SPLETT, A
SCHUPPERT, B
PETERMANN, K
机构：
[1] Technische Universität, Berlin Institut für Hochfrequenztechnik, D-10587 Berlin
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 23期
关键词：
OPTICAL WAVE-GUIDES; INTEGRATED OPTICS; SILICON-ON-INSULATOR;
D O I：
10.1049/el:19931356
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Waveguide losses in SOI (silicon-on-insulator) material fabricated by different techniques are compared thus enabling us to confirm the theoretical dependence of losses on layer thickness. Single-mode waveguide losses in BE-SOI (bond and etchback-SOI) below 0.5dB/cm are reported for waveguides with cross-sections of several square micrometres.
引用
收藏
页码：2031 / 2033
页数：3
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