ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF GAAS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY

被引：35
|
作者：
VONBARDELEBEN, HJ
MANASREH, MO
LOOK, DC
EVANS, KR
STUTZ, CE
机构：
[1] WRIGHT LAB,ELECTRON TECHNOL DIRECTORATE WL ELRA,DAYTON,OH 45433
[2] WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
来源：
PHYSICAL REVIEW B | 1992年 / 45卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.45.3372
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electron-paramagnetic-resonance results demonstrate an arsenic-antisite related deep donor defect to be the dominant native defect in GaAs layers grown by low-temperature molecular-beam epitaxy (LTMBE). This defect is different from the EL2-related native arsenic-antisite defect. The thermal-equilibrium concentration of 3 x 10(18) cm-3 ionized As(Ga) defects directly shows the additional presence of unidentified acceptor defects in the same concentration range. The defect distribution in GaAs grown by LTMBE is unstable under thermal annealing at T greater-than-or-similar-to 500-degrees-C.
引用
收藏
页码：3372 / 3375
页数：4
相关论文
共 50 条
  • [31] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    LANG, DV
    CHO, AY
    GOSSARD, AC
    ILEGEMS, M
    WIEGMANN, W
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2558 - 2564
  • [32] CHARACTERIZATION OF GAAS-LAYERS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY USING ION-BEAM TECHNIQUES
    YU, KM
    KAMINSKA, M
    LILIENTALWEBER, Z
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) : 2850 - 2856
  • [33] ARE LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GAAS BUFFERS GOOD FOR MICROWAVE APPLICATIONS
    STREIT, DC
    HOPPE, MM
    CHEN, CH
    LIU, JK
    YEN, KH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 819 - 821
  • [34] LOW-TEMPERATURE SELECTIVE GROWTH OF GAAS BY ALTERNATELY SUPPLYING MOLECULAR-BEAM EPITAXY
    YOKOYAMA, S
    OOGI, J
    YUI, D
    KAWABE, M
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 32 - 34
  • [35] LOW-TEMPERATURE GROWTH OF ALAS/GAAS HETEROSTRUCTURES BY MODULATED MOLECULAR-BEAM EPITAXY
    BRIONES, F
    GONZALEZ, L
    RECIO, M
    VAZQUEZ, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (07): : L1125 - L1127
  • [36] Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
    Vilisova, MD
    Ivonin, IV
    Lavrentieva, LG
    Subach, SV
    Yakubenya, MP
    Preobrazhenskii, VV
    Putyato, MA
    Semyagin, BR
    Bert, NA
    Musikhin, YG
    Chaldyshev, VV
    SEMICONDUCTORS, 1999, 33 (08) : 824 - 829
  • [37] Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy
    M. D. Vilisova
    I. V. Ivonin
    L. G. Lavrentieva
    S. V. Subach
    M. P. Yakubenya
    V. V. Preobrazhenskii
    M. A. Putyato
    B. R. Semyagin
    N. A. Bert
    Yu. G. Musikhin
    V. V. Chaldyshev
    Semiconductors, 1999, 33 : 824 - 829
  • [38] MICROVOID FORMATION IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY-GROWN SILICON
    WEATHERLY, GC
    PEROVIC, DD
    NOEL, JP
    HOUGHTON, DC
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 435 - 439
  • [39] LOW-TEMPERATURE EPITAXY OF SILICON BY MOLECULAR-BEAM EPITAXY (MBE)
    KASPER, E
    1980, 53 (4-5): : 170 - 176
  • [40] LOW-TEMPERATURE PHOTOLUMINESCENCE PROPERTIES OF HIGH-QUALITY GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    RAO, EVK
    ALEXANDRE, F
    MASSON, JM
    ALLOVON, M
    GOLDSTEIN, L
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 503 - 508
12345