ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF GAAS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY

被引：35
|
作者：
VONBARDELEBEN, HJ
MANASREH, MO
LOOK, DC
EVANS, KR
STUTZ, CE
机构：
[1] WRIGHT LAB,ELECTRON TECHNOL DIRECTORATE WL ELRA,DAYTON,OH 45433
[2] WRIGHT STATE UNIV,RES CTR,DAYTON,OH 45435
来源：
PHYSICAL REVIEW B | 1992年 / 45卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.45.3372
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electron-paramagnetic-resonance results demonstrate an arsenic-antisite related deep donor defect to be the dominant native defect in GaAs layers grown by low-temperature molecular-beam epitaxy (LTMBE). This defect is different from the EL2-related native arsenic-antisite defect. The thermal-equilibrium concentration of 3 x 10(18) cm-3 ionized As(Ga) defects directly shows the additional presence of unidentified acceptor defects in the same concentration range. The defect distribution in GaAs grown by LTMBE is unstable under thermal annealing at T greater-than-or-similar-to 500-degrees-C.
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页码：3372 / 3375
页数：4
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