ULTRAHIGH DOPING LEVELS OF GAAS WITH BERYLLIUM BY MOLECULAR-BEAM EPITAXY

被引：40

|

作者：

LIEVIN, JL

ALEXANDRE, F

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 10期

关键词：

D O I：

10.1049/el:19850293

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：413 / 414

页数：2

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