A LOW DARK-CURRENT, PLANAR INGAAS P-I-N PHOTODIODE WITH A QUATERNARY INGAASP CAP LAYER

被引：0
|
作者：
KIM, OK
DUTT, BV
MCCOY, RJ
ZUBER, JR
机构：
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 02期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：138 / 143
页数：6
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