FULLY ECL-COMPATIBLE GAAS STANDARD-CELL LIBRARY

被引：1
|
作者：
SCHOU, G
CHEREL, J
PEREA, EH
DANCKAERT, JY
DEAN, T
CHAPLARD, J
机构：
[1] Thomson Semiconducter, Orsay, Fr, Thomson Semiconducter, Orsay, Fr
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1988年 / 23卷 / 03期
关键词：
LOGIC CIRCUITS; EMITTER COUPLED - SEMICONDUCTING GALLIUM ARSENIDE;
D O I：
10.1109/4.305
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A standard cell library for MSI circuits is described. It is based on buffered FET logic (BFL) with 1- mu m gate-length MESFET transistors. It contains gates, buffers, master-slave flip-flops, and ECL interfaces and it has been optimized to operate over the military temperature range. It is fully compatible with ECL circuits (signal level and power supply). Typical propagation delay is 80 ps for an inverter (FI equals FO equals 1) and power dissipation is 5 mW per BFL cell. A realistic printed circuit board for test and demonstration is proposed.
引用
收藏
页码：676 / 680
页数：5
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