PRESENT STATUS OF RESEARCH ON RADIATION HARDENED INTEGRATED-CIRCUITS

被引：0

|

作者：

ONO, M ^{[1
]}

机构：

[1] ELECTROTECH LAB,SAKURA,IBARAKI 305,JAPAN

来源：

APPLIED RADIATION AND ISOTOPES | 1986年 / 37卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

引用

收藏

页码：96 / 97

页数：2

相关论文

共 50 条

[21] THE STATUS OF ISOLATION IN HIGH-VOLTAGE INTEGRATED-CIRCUITS
BECKE, HW
GAMMEL, JC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C113 - C113
[22] RADIATION HARDENING OF MOS INTEGRATED-CIRCUITS ON (111) SILICON
PHILLIPS, DH
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2190 - 2192
[23] TRANSIENT RADIATION EFFECTS ON SILICON MESFET INTEGRATED-CIRCUITS
SHEDD, WM
SAMPSON, JL
LAPIERRE, DC
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) : 4183 - 4186
[24] RADIATION HARDENING OF CMOS-SOS INTEGRATED-CIRCUITS
SCHLESIER, KM
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) : 152 - 158
[25] THE SEMICONDUCTOR RESEARCH CORPORATION AND UNIVERSITY-RESEARCH IN INTEGRATED-CIRCUITS
SUMNEY, LW
BURGER, RM
IEEE TRANSACTIONS ON EDUCATION, 1986, 29 (02) : 61 - 68
[26] DEVELOPMENT OF MOS-TRANSISTORS FOR RADIATION-HARDENED LARGE-SCALE INTEGRATED-CIRCUITS AND ANALYSIS OF RADIATION-INDUCED DEGRADATION
KAMIMURA, H
YOSHIOKA, S
AKIYAMA, M
NAKAMURA, M
TAMURA, T
KUBOYAMA, S
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 1994, 31 (01) : 24 - 33
[27] OPTOELECTRONIC INTEGRATED-CIRCUITS
FORREST, SR
PROCEEDINGS OF THE IEEE, 1987, 75 (11) : 1488 - 1497
[28] INTEGRATED-CIRCUITS FOR TELEPHONY
GRAY, PR
MESSERSCHMITT, DG
PROCEEDINGS OF THE IEEE, 1980, 68 (08) : 991 - 1009
[29] LINEAR INTEGRATED-CIRCUITS
HUFFMAN, G
EDN MAGAZINE-ELECTRICAL DESIGN NEWS, 1980, 25 (04): : 96 - 103
[30] OPTOELECTRONIC INTEGRATED-CIRCUITS
WILLIAMS, PJ
CARTER, AC
GEC JOURNAL OF RESEARCH, 1993, 10 (02): : 91 - 95

← 1 2 3 4 5 →