CARRIER TRANSPORT ACROSS THE BETA-FESI2/SI HETEROJUNCTION

Thin polycrystalline films of beta-FeSi2 have been formed by solid state reaction with boron or phosphorus doped silicon and the corresponding electrical heterojunction properties have been characterised. The transport mechanisms across the beta-FeSi2/n-Si junction is suggested to be limited by either thermionic emission or recombination of electrons at the silicide-silicon interface. Temperature activated current-voltage analysis and capacitance-voltage analysis yielded an effective electron barrier of 0.66 +/- 0.03 eV at 0 K. The current transport across the beta-FeSi2/p-Si junction appear to be limited by thermionic emission of holes from the silicon substrate to the silicide. The effective hole barrier is 0.43 +/- 0.03 eV independent of temperature.