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SINGLE LAYER GARNET MATERIALS FOR 1-MU-M DIAMETER BUBBLE ION-IMPLANTED CONTIGUOUS-DISK DEVICES
被引:0
|
作者
:
CHANG, CTM
论文数:
0
引用数:
0
h-index:
0
CHANG, CTM
PARKER, SG
论文数:
0
引用数:
0
h-index:
0
PARKER, SG
机构
:
来源
:
SOLID STATE COMMUNICATIONS
|
1981年
/ 40卷
/ 01期
关键词
:
D O I
:
10.1016/0038-1098(81)90703-1
中图分类号
:
O469 [凝聚态物理学];
学科分类号
:
070205 ;
摘要
:
引用
收藏
页码:23 / 27
页数:5
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FMR STUDY OF AN ION-IMPLANTED LAYER ON BUBBLE GARNET-FILMS
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[22]
CHARGED WALL BEHAVIOR IN 1-MU-M BUBBLE IMPLANTED STRUCTURES
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IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
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IEEE TRANSACTIONS ON MAGNETICS,
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(05)
: 494
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[23]
TEMPERATURE-DEPENDENCE OF 0.5-MU-M BUBBLE PROPAGATION IN ION-IMPLANTED DEVICES
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ROLES OF A HARD BUBBLE SUPPRESSION LAYER IN ION-IMPLANTED BUBBLE-DEVICES
URAI, H
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[25]
DEVELOPMENT OF AN ION-IMPLANTED BUBBLE DEVICE WITH 4-MU-M PERIOD
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[26]
HIGH CURIE-TEMPERATURE DRIVE LAYER MATERIALS FOR ION-IMPLANTED MAGNETIC-BUBBLE DEVICES
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[27]
MAGNETIC STATE OF ION-IMPLANTED LAYER IN GARNET BUBBLE FILM - TEMPERATURE-DEPENDENCE STUDY
SURAN, G
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[28]
DESIGN AND CHARACTERISTICS FOR A 4 mu m PERIOD ION-IMPLANTED BUBBLE DEVICE.
Satoh, Yoshio
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1600,
(20):
[29]
DESIGN AND CHARACTERISTICS FOR A 4 MU-M PERIOD ION-IMPLANTED BUBBLE DEVICE
SATOH, Y
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OHASHI, M
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OHASHI, M
FUJITSU SCIENTIFIC & TECHNICAL JOURNAL,
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: 281
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[30]
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AHN, KY
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KANE, SM
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IEEE TRANSACTIONS ON MAGNETICS,
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(06)
: 1648
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