ELECTRON ELECTRON INTERACTION IN SEMICONDUCTORS WITH APPLICATION TO HOT-ELECTRON TRANSISTORS IN SILICON AND GALLIUM-ARSENIDE

被引：27
|
作者：
RORISON, JM
HERBERT, DC
机构：
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1986年 / 19卷 / 21期
关键词：
D O I：
10.1088/0022-3719/19/21/006
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：3991 / 4010
页数：20
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