HIGH-DENSITY SILICON-NITRIDE THIN-FILM IN PECVD

被引：10
|
作者：
REYNES, B
BRUYERE, JC
机构：
[1] Laboratoire d'Etudes des Propriétés Electroniques des Solides, CNRS associated with Université Joseph Fourier, 38042 Grenoble Cédex
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1992年 / 32卷 / 1-3期
关键词：
D O I：
10.1016/0924-4247(92)80003-L
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The aim of this work is to report the preparation and some chemical and physical properties of high-density silicon nitride thin films. The films are prepared by plasma-enhanced chemical vapor deposition (PECVD) at low frequency (50 kHz) with helium dilution and different silane/nitrogen/ammonia gas mixtures. In the best case the atomic hydrogen density is less than 7 x 10(21) atoms/cm3, mainly bound in NH sites, with a very low etch rate of 10 angstrom/min. The thermal stability and the diffusion barrier properties have been checked. This material must be a good candidate for chemical grafting and as a protective layer in chemical sensors.
引用
收藏
页码：303 / 306
页数：4
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