Radiative recombination processes in p-type modulation-doped SiGe quantum wells and Si epilayers

被引：0
|
作者：
Buyanova, IA
Chen, WM
Henry, A
Ni, WX
Hansson, GV
Monemar, B
机构：
[1] Department of Physics and Measurement Technology, Linköping University
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 157卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(95)00328-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Optical properties of the two-dimensional hole gas (2DHG), formed in modulation-doped Si thin films and SiGe quantum wells grown by molecular beam epitaxy, are studied in detail by photoluminescence (PL) spectroscopy. New PL bands related to the radiative recombination of the 2DHG and nonequilibrium photoexcited electrons are revealed. The properties of these PL bands are shown to be strongly dependent on structure parameters and experimental conditions.
引用
收藏
页码：362 / 366
页数：5
相关论文
共 50 条
  • [31] Radiative recombination spectra of p-type δ-doped GaAs/AlAs multiple quantum wells near the Mott transition
    Kundrotas, J.
    Cerskus, A.
    Valusis, G.
    Lachab, M.
    Khanna, S. P.
    Harrison, P.
    Linfield, E. H.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (12)
  • [32] Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells
    Khalil, Hagir Mohammed
    Sun, Yun
    Balkan, Naci
    Amann, Andreas
    Sopanen, Markku
    NANOSCALE RESEARCH LETTERS, 2011, 6
  • [33] Hole energy levels in p-type δ-doped Si quantum wells
    Gaggero-Sager, LM
    Mora-Ramos, ME
    SOLID-STATE ELECTRONICS, 2000, 44 (01) : 175 - 183
  • [34] Magnetic field effects in p-type modulation-doped GaAs quantum wires
    Nomura, S
    Isshiki, H
    Aoyagi, Y
    Sugano, T
    PHYSICA B, 1996, 227 (1-4): : 38 - 41
  • [35] High-transconductance p-type SiGe modulation-doped field-effect transistor
    Univ of Illinois, Urbana-Champaign, United States
    Electron Lett, 8 (680-681):
  • [36] HIGH-TRANSCONDUCTANCE P-TYPE SIGE MODULATION-DOPED FIELD-EFFECT TRANSISTOR
    ARAFA, M
    ISMAIL, K
    FAY, P
    CHU, JO
    MEYERSON, BS
    ADESIDA, I
    ELECTRONICS LETTERS, 1995, 31 (08) : 680 - 681
  • [37] RADIATIVE RECOMBINATION IN HEAVILY DOPED P-TYPE GAAS
    SUSHKOV, VP
    MOMA, YA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (10): : 1273 - &
  • [38] Radiative recombination in p-type δ-doped layers in GaAs
    Zhao, QX
    Willander, M
    Holtz, PO
    Lu, W
    Dou, HF
    Shen, SC
    Li, G
    Jagadish, C
    PHYSICAL REVIEW B, 1999, 60 (04): : R2193 - R2196
  • [39] RADIATIVE RECOMBINATION IN HEAVILY DOPED P-TYPE GERMANIUM
    WAGNER, J
    VINA, L
    PHYSICAL REVIEW B, 1984, 30 (12): : 7030 - 7036
  • [40] Intersubband absorption performed on p-type modulation-doped Si0.2Ge0.8/Si quantum wells grown on Si0.5Ge0.5 pseudosubstrate
    Diehl, L
    Sigg, H
    Dehlinger, G
    Grützmacher, D
    Müller, E
    Gennser, U
    Sagnes, I
    Fromherz, T
    Campidelli, Y
    Kermarrec, O
    Bensahel, D
    Faist, J
    APPLIED PHYSICS LETTERS, 2002, 80 (18) : 3274 - 3276
12345