Radiative recombination processes in p-type modulation-doped SiGe quantum wells and Si epilayers

被引：0
|
作者：
Buyanova, IA
Chen, WM
Henry, A
Ni, WX
Hansson, GV
Monemar, B
机构：
[1] Department of Physics and Measurement Technology, Linköping University
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 157卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(95)00328-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Optical properties of the two-dimensional hole gas (2DHG), formed in modulation-doped Si thin films and SiGe quantum wells grown by molecular beam epitaxy, are studied in detail by photoluminescence (PL) spectroscopy. New PL bands related to the radiative recombination of the 2DHG and nonequilibrium photoexcited electrons are revealed. The properties of these PL bands are shown to be strongly dependent on structure parameters and experimental conditions.
引用
收藏
页码：362 / 366
页数：5
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