共 50 条
- [21] MAGNETORESISTANCE OF HEAVILY DOPED N-TYPE GERMANIUM IN WEAK MAGNETIC FIELDS SOVIET PHYSICS-SOLID STATE, 1964, 6 (02): : 371 - 374
- [22] ORIGIN OF NEGATIVE MAGNETORESISTANCE IN HEAVILY DOPED N-TYPE SILICON AND GERMANIUM PHYSICAL REVIEW B, 1979, 19 (12): : 6390 - 6396
- [23] ELASTIC MODULI OF HEAVILY DOPED N-TYPE GERMANIUM AT 300-550 DEGREES K SOVIET PHYSICS SOLID STATE,USSR, 1968, 10 (05): : 1226 - +
- [24] ELECTOREFLECTANCE OF HEAVILY DOPED N-TYPE AND P-TYPE GERMANIUM NEAR DIRECT ENERGY-GAP PHYSICAL REVIEW B, 1972, 6 (02): : 521 - &
- [25] TRANSPORT PROPERTIES OF N-TYPE AND P-TYPE BI2SE3, 4.2 DEGREES K TO 300 DEGREES K BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 353 - 353
- [26] THERMAL CONDUCTIVITY OF N-TYPE GERMANIUM FROM 0.3 DEGREES TO 4.2 DEGREES K BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (01): : 94 - &
- [29] NEGATIVE MAGNETORESISTANCE OF HEAVILY DOPED COMPENSATED P-TYPE HG1-XMNXTE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (01): : 85 - 86
- [30] MAGNETORESISTANCE AND LONGITUDINAL NERNST-ETTINGSHAUSEN EFFECT IN HEAVILY DOPED P-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (08): : 1049 - +