MELT GROWTH OF CDTE CRYSTALS AND INVESTIGATION OF THEIR GRAIN-BOUNDARIES

被引：3
|
作者：
MILENOV, TI
GOSPODINOV, MM
机构：
[1] Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1992年 / 322卷 / 03期
关键词：
D O I：
10.1016/0168-9002(92)91198-I
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Transmission electron microscopy investigations have been carried out on CdTe crystals grown in quartz ampoules in a high temperature region (1040-1091-degrees-C), near the melting point of 1092-degrees-C, by the travelling heater method and by the Bridgman method from nearly stoichiometric melts, and in the relatively low temperature region (920 -950-degrees-C) by directional solidification of Te-excess solution. Two types of boundaries are observed: grain and subgrain boundaries. Both dislocations with Burgers vector b = a/2[110] and b = a/6[112] are present in the grain boundary. A comparison of subgrain boundaries in low and high temperature CdTe is provided.
引用
收藏
页码：363 / 367
页数：5
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