MELT GROWTH OF CDTE CRYSTALS AND INVESTIGATION OF THEIR GRAIN-BOUNDARIES

Transmission electron microscopy investigations have been carried out on CdTe crystals grown in quartz ampoules in a high temperature region (1040-1091-degrees-C), near the melting point of 1092-degrees-C, by the travelling heater method and by the Bridgman method from nearly stoichiometric melts, and in the relatively low temperature region (920 -950-degrees-C) by directional solidification of Te-excess solution. Two types of boundaries are observed: grain and subgrain boundaries. Both dislocations with Burgers vector b = a/2[110] and b = a/6[112] are present in the grain boundary. A comparison of subgrain boundaries in low and high temperature CdTe is provided.