HIGH-FREQUENCY PERFORMANCE OF SI1-XGEX/SI1-YGEY/SI1-XGEXHBTS

被引：2
|
作者：
ROSENFELD, D [1 ]
ALTEROVITZ, SA [1 ]
机构：
[1] TECHNION ISRAEL INST TECHNOL,FAC ELECT ENGN,HAIFA,ISRAEL
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 03期
关键词：
BIPOLAR DEVICES; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19930178
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The results of a theoretical study of the performance of high speed SiGe HBTs is presented. The study includes a group of SiGe HBTs in which the Ge concentration in the base is 20% higher than that in the emitter and collector (i.e. y = x + 0.2). It is shown that the composition dependences of f(T) and the f(max) are non-monotonic. As the Ge composition in the emitter and collector layers is increased, f(T) and f(max) first decrease, then remain constant and finally increase to attain their highest values.
引用
收藏
页码：260 / 261
页数：2
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