INTRALEVEL HYBRID RESIST PROCESS FOR THE FABRICATION OF METAL-OXIDE SEMICONDUCTOR-DEVICES WITH SUB-MICRON GATE LENGTHS

被引：0
|
作者：
HELBERT, JN
SEESE, PA
GONZALES, AJ
WALKER, CC
机构：
来源：
OPTICAL ENGINEERING | 1983年 / 22卷 / 02期
关键词：
D O I：
10.1117/12.7973079
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
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页码：185 / 189
页数：5
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