INGAASP P-I-N PHOTODIODES FOR OPTICAL COMMUNICATION AT THE 1.3MU-M WAVELENGTH

被引:3
|
作者
YI, MB [1 ]
PASLASKI, J [1 ]
LU, LT [1 ]
MARGALIT, S [1 ]
YARIV, A [1 ]
BLAUVELT, H [1 ]
LAU, K [1 ]
机构
[1] ORTEL CORP,ALHAMBRA,CA 91803
关键词
D O I
10.1063/1.336247
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4730 / 4732
页数:3
相关论文
共 50 条
  • [41] Development of the Growth and Wavelength Control Technique of In As Quantum Dots for 1.3 mu m Optical Communication Devices
    Park, Ho Jin
    Kim, Do Yeob
    Kim, Goon Sik
    Kim, Jongho
    Ryu, H. H.
    Jeon, Minhyon
    Leem, Jae-Young
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2007, 17 (07): : 390 - 395
  • [42] PREPARATION AND CHARACTERIZATION OF GAINASP-INP DOUBLE-HETEROSTRUCTURE WAFERS AND LASERS FOR THE 1.3MU-M WAVELENGTH RANGE
    GOBEL, E
    GOTTSMANN, H
    HERZOG, HJ
    MARSCHALL, P
    SCHLOSSER, E
    SCHURR, EA
    IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1979, 3 (06): : 186 - 188
  • [43] Influence of radiative recombination on performance of p-i-n HOT long wavelength infrared HgCdTe photodiodes
    Rogalski, A.
    Kopytko, M.
    Jozwikowski, K.
    Martyniuk, P.
    INFRARED TECHNOLOGY AND APPLICATIONS XLIV, 2018, 10624
  • [44] ON THE RELIABILITY OF 1.3-MU-M INGAASP/INP EDGE-EMITTING LEDS FOR OPTICAL-FIBER COMMUNICATION
    ETTENBERG, M
    OLSEN, GH
    HAWRYLO, FZ
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1984, 2 (06) : 1016 - 1023
  • [45] INTEGRATION OF 1.3-MU-M WAVELENGTH LASERS AND OPTICAL AMPLIFIERS
    KOREN, U
    MILLER, BI
    RAYBON, G
    ORON, M
    YOUNG, MG
    KOCH, TL
    DEMIGUEL, JL
    CHIEN, M
    TELL, B
    BROWNGOEBELER, K
    BURRUS, CA
    APPLIED PHYSICS LETTERS, 1990, 57 (14) : 1375 - 1377
  • [46] Photon recycling effect in small pixel p-i-n HgCdTe long wavelength infrared photodiodes
    Kopytko, M.
    Joiwikowski, K.
    Martyniuk, P.
    Rogalski, A.
    INFRARED PHYSICS & TECHNOLOGY, 2019, 97 : 38 - 42
  • [48] Frequency Response Performance Analysis of p-i-n Photodiodes
    Torres Pereira, Jorge Manuel
    COMPUTER FIELD MODELS OF ELECTROMAGNETIC DEVICES, 2010, 34 : 851 - 860
  • [49] Low back reflection receptacled P-I-N photodiodes
    Andrievski, VF
    HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97, 1998, 48 : 247 - 250
  • [50] LAG PROPERTIES OF SILICON p-i-n PHOTODIODES.
    Trishenkov, M.A.
    Khakuashev, P.Ye.
    Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika), 1984, 29 (07): : 131 - 140