CARBON DELTA-DOPING IN GAAS BY METAL-ORGANIC MOLECULAR-BEAM EPITAXY

被引：2
|
作者：
YAMADA, T [1 ]
SHIRAHAMA, M [1 ]
TOKUMITSU, E [1 ]
KONAGAI, M [1 ]
TAKAHASHI, K [1 ]
机构：
[1] TOKYO INST TECHNOL, DEPT ELECT & ELECTR ENGN, MEGURO KU, TOKYO 152, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 8B期
关键词：
MOMBE; DELTA-DOPING; TMG; CARBON DOPING;
D O I：
10.1143/JJAP.32.L1123
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Delta-Doping of carbon into GaAs by metal-organic molecular beam epitaxy (MOMBE) has been studied in detail using trimethylgallium (TMG), Ga and AS4. TMG was adsorbed in the wide range of temperatures from 20-degrees-C to 550-degrees-C during growth interruption. It is shown that Ga deposition after TMG adsorption is effective for obtaining a high peak hole concentration. This is in contrast to the case with As evaporation, which drastically reduces the peak carrier concentration. The dependence of peak hole concentration on the TMG adsorption temperature shows a specific feature. The highest peak hole concentration is 4 x 10(19) cm-3 for a TMG adsorption temperature of 20-degrees-C.
引用
收藏
页码：L1123 / L1125
页数：3
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