INVESTIGATION OF FORMATION OF COMPLEXES IN N-TYPE GE CONTAINING OXYGEN AND VARIOUS DONOR SATELLITE IMPURITIES

被引：0
|
作者：
BABICH, VM [1 ]
BARANSKII, PI [1 ]
ILCHISHIN, VA [1 ]
SHERSHEL, VA [1 ]
机构：
[1] ACAD SCI UKSSR,SEMICOND INST,KIEV,UKSSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：928 / 929
页数：2
相关论文
共 50 条
  • [41] ELECTRICAL PROPERTIES OF N-TYPE GAP GROWN FROM MELTS CONTAINING OXYGEN
    GLORIOZOVA, RI
    GRACHEV, VM
    KOLESNIK, LI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (08): : 1402 - 1403
  • [42] Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs
    Lin, Y. C.
    Shie, Sheng-Li
    Shie, Tin-En
    Wong, Yuen-Yee
    Chen, K. S.
    Chang, E. Y.
    JOURNAL OF ELECTRONIC MATERIALS, 2011, 40 (03) : 289 - 294
  • [43] EXPLANATION FOR DISCREPANCY IN RECOMBINATION LEVEL POSITIONS IN IRRADIATED N-TYPE GE REPORTED BY VARIOUS OBSERVERS
    CURTIS, OL
    JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 2094 - &
  • [44] Phosphorous ion implantation into NiGe layer for Ohmic contact formation on n-type Ge
    Minoura, Yuya
    Oka, Hiroshi
    Hosoi, Takuji
    Matsugaki, Jin
    Kuroki, Shin-Ichiro
    Shimura, Takayoshi
    Watanabe, Heiji
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (08) : 55 - 59
  • [45] Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs
    Y. C. Lin
    Sheng-Li Shie
    Tin-En Shie
    Yuen-Yee Wong
    K. S. Chen
    E. Y. Chang
    Journal of Electronic Materials, 2011, 40 : 289 - 294
  • [46] NERNST-ETTINGSHAUSEN COEFFICIENT OF N-TYPE GE IN THE CASE OF SCATTERING BY IMPURITIES IN QUANTIZING MAGNETIC-FIELDS
    DRAPAK, LS
    KOROLYUK, SL
    KOTSUR, LN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (04): : 477 - 478
  • [47] Synthesis and optoelectronic investigation of triarylamines based on imidazoanthraquinone as donor–acceptors for n-type materials
    Bharat K Sharma
    Azam M Shaikh
    Sajeev Chacko
    Rajesh M Kamble
    Journal of Chemical Sciences, 2018, 130
  • [48] Impact of direct plasma hydrogenation on thermal donor formation in n-type CZ silicon
    Rafí, JM
    Simoen, E
    Claeys, C
    Huang, YL
    Ulyashin, AG
    Job, R
    Versluys, J
    Clauws, P
    Lozano, M
    Campabadal, F
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2005, 152 (01) : G16 - G24
  • [49] Thermal donor formation in direct-plasma hydrogenated n-type Czochralski silicon
    Simoen, E.
    Claeys, C.
    Rafi, J. M.
    Ulyashin, A. G.
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 134 (2-3): : 189 - 192
  • [50] Dissociation energies of P- and Sb-hydrogen-related complexes in n-type Ge
    Kolkovsky, Vl
    Klemm, S.
    Weber, J.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (12)
12345