INVESTIGATION OF FORMATION OF COMPLEXES IN N-TYPE GE CONTAINING OXYGEN AND VARIOUS DONOR SATELLITE IMPURITIES

被引：0
|
作者：
BABICH, VM [1 ]
BARANSKII, PI [1 ]
ILCHISHIN, VA [1 ]
SHERSHEL, VA [1 ]
机构：
[1] ACAD SCI UKSSR,SEMICOND INST,KIEV,UKSSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 07期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：928 / 929
页数：2
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