ATTENUATION OF PHONON-SCATTERING INTENSITIES BY POINT-DEFECTS

被引：1

作者：

DOSCH, H

PEISL, J

DORNER, B

机构：

[1] UNIV MUNICH, SEKT PHYS, D-8000 MUNICH 22, FED REP GER

[2] INST MAX VON LAUE PAUL LANGEVIN, F-38042 GRENOBLE, FRANCE

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1986年 / 63卷 / 04期

关键词：

D O I：

10.1007/BF01726196

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：479 / 485

页数：7

共 50 条

[11] LIGHT-SCATTERING BY POINT-DEFECTS IN INSULATING CRYSTALS
MILLS, DL
JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5864 - 5867
[12] POSSIBLE MECHANISM OF CARRIER SCATTERING IN GERMANIUM WITH POINT-DEFECTS
EMTSEV, VV
KLINGER, LI
MASHOVET.TV
JETP LETTERS, 1974, 19 (09) : 301 - 302
[13] DIFFUSE-SCATTERING STUDIES OF POINT-DEFECTS IN CLUSTERS
YOUNG, FW
LARSON, BC
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1974, 19 (03): : 257 - 257
[14] ANISOTROPIC SCATTERING OF CONDUCTION ELECTRONS ON POINT-DEFECTS IN AL
BONING, K
PFANDNER, K
ROSNER, P
SCHLUTER, M
JOURNAL OF PHYSICS F-METAL PHYSICS, 1975, 5 (06): : 1176 - 1196
[15] THE TEMPERATURE-DEPENDENCE OF MOBILITY AT THE SCATTERING ON POINT-DEFECTS
ISKRA, VD
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1985, 28 (09): : 50 - 57
[16] CLUSTERS OF POINT-DEFECTS AND THEIR INFLUENCE ON THE SCATTERING OF CARRIERS IN SEMICONDUCTORS
ARTEMEV, VA
VITOVSKII, NA
MIKHNOVICH, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (08): : 868 - 871
[17] SCATTERING OF POLARITONS BY POINT-DEFECTS IN SPATIALLY DISPERSIVE MEDIA
MADDOX, R
MILLS, DL
PHYSICAL REVIEW B, 1975, 11 (06): : 2229 - 2236
[18] PHONON-SCATTERING AT FREQUENCIES NEAR THE EXCITON FREQUENCY OF 2-LEVEL DEFECTS
TUCKER, JW
JOURNAL DE PHYSIQUE, 1981, 42 (NC6): : 478 - 480
[19] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES
HESS, K
APPLIED PHYSICS LETTERS, 1979, 35 (07) : 484 - 486
[20] PHONON-SCATTERING BY DISLOCATIONS IN METALLIC ALLOYS
MADARASZ, FL
KLEMENS, PG
PHYSICAL REVIEW B, 1981, 23 (06) : 2553 - 2562

← 1 2 3 4 5 →