QUASI-ONE-DIMENSIONAL BALLISTIC ELECTRON-TRANSPORT IN IN-PLANE-GATED CHANNELS AT LIQUID-NITROGEN TEMPERATURE

被引：6

作者：

DEVRIES, DK ^{[1
]}

PLOOG, K ^{[1
]}

WIECK, AD ^{[1
]}

机构：

[1] INST FESTKORPERELEKTRON,D-10117 BERLIN,GERMANY

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

关键词：

D O I：

10.1016/0038-1101(94)90280-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In-plane-gated quantum point contacts were fabricated in a pseuudomorphic GaAs/InGaAs/AlGaAs heterostructure by focused ion beam implantation of 100 keV Ga+ ions. We see an intricate conductance quantization structure at 4.2 K. As the temperature is increased, the quantatization becomes less pronounced but clear remnants are observed even at liquid nitrogen temperature and above.

引用

页码：701 / 703

页数：3

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