SUB-100-MU - A CURRENT OPERATION OF STRAINED INGAAS QUANTUM-WELL LASERS AT LOW-TEMPERATURES

Very low threshold currents (< 100 muA) have been achieved in InGaAs strained single quantum well lasers at cryogenic temperatures. Threshold currents of 38 and 56 muA and external quantum efficiency approximately 1 mW/mA have been demonstrated under cw operation condition at temperatures of 6 and 77 K, respectively. The external quantum efficiency increased by about a factor of 2 at low temperatures (< 100 K) in comparison to that at room temperature. These results are relevant to the prospect of integration of semiconductor lasers with low temperature electronics for high performance (C) 1994 American Institute of Physics.