THE C49 TO C54 PHASE-TRANSFORMATION IN TISI2 THIN-FILMS

被引：57

作者：

MANN, RW ^{[1
]}

CLEVENGER, LA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 05期

关键词：

D O I：

10.1149/1.2054921

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The microstructure and kinetics of the polymorphic C49 to C54-TiSi, phase transformation have been studied using samples prepared as in self-aligned silicide applications. For C49-TiSi, thin films formed at temperatures of 600 and 625-degrees-C on (100) single-crystal silicon substrates, the effective activation energy was 5.6 +/- 0.3 and 5.7 +/- 0.08 eV, respectively, for the C49 to C54 phase transformation carried out in the temperature range 600 to 700-degrees-C. We concluded that the transformation process occurred by nucleation and growth of the orthorhombic face-centered (C54) phase from the as-formed orthorhombic base-centered (C49) phase. The Avrami exponent of 2.2 +/- 0.09 and the optical observations suggest that most of the nucleation occurred during the beginning of the transformation process.

引用

页码：1347 / 1350

页数：4

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