ROOM-TEMPERATURE OPERATION OF ULTRASHORT WAVELENGTH (619NM) ALGAINP/GAINP TENSILE-STRAINED QUANTUM-WELL LASERS

被引：12
|
作者：
SUMMERS, HD
BLOOD, P
机构：
[1] Department of Physics and Astronomy, University of Wales, College of Cardiff, Cardiff CF2 3YB
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 11期
关键词：
LASERS; SEMICONDUCTOR LASERS;
D O I：
10.1049/el:19930672
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Double quantum well, tensile strained AlGalnP/GaInP lasers have been grown by MOCVD which emit at 619-623 nm. The dependence of threshold current density J(th) on cavity length and temperature has been investigated and a pulsed J(th) of 2.15 kA cm2 obtained for a 750 mum long device operating at room temperature. Comparison of these lasers with unstrained devices shows evidence of a reduction in the intrinsic threshold current due to strain.
引用
收藏
页码：1007 / 1008
页数：2
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