INGAAS/INP HBTS WITH A BURIED SUBCOLLECTOR FABRICATED BY SELECTIVE EPITAXY

被引：0
|
作者：
FREI, MR [1 ]
HAYES, JR [1 ]
SONG, JI [1 ]
CANEAU, C [1 ]
BHAT, R [1 ]
COX, H [1 ]
机构：
[1] BELL COMMUN RES INC,RED BANK,NJ 07701
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 11期
关键词：
D O I：
10.1109/16.163519
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：2657 / 2658
页数：2
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