EFFECTS OF PREOXIDATION AMBIENT IN VERY THIN THERMAL OXIDE ON SILICON

被引：8
|
作者：
RUZYLLO, J [1 ]
机构：
[1] PENN STATE UNIV,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期
关键词：
D O I：
10.1149/1.2108992
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1677 / 1682
页数：6
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