MIXING AND CHEMICAL EFFECTS IN SIMS DEPTH PROFILING THE SI/SIO2 INTERFACE

被引：8
|
作者：
ANDERLE, M [1 ]
LOXTON, CM [1 ]
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 15卷 / 1-6期
关键词：
D O I：
10.1016/0168-583X(86)90281-8
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：186 / 188
页数：3
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