HIGH-SPEED WAVE-GUIDE-INTEGRATED PHOTODIODES GROWN BY METAL ORGANIC MOLECULAR-BEAM EPITAXY

被引：13
|
作者：
EMEIS, N
SCHIER, M
HOFFMANN, L
HEINECKE, H
BAUR, B
机构：
[1] Siemens Research Laboratories, 8000 München 83
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 04期
关键词：
PHOTODIODES; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS; EPITAXY;
D O I：
10.1049/el:19920215
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using InP/InGaAs layers grown by metal organic molecular beam epitaxy (MOMBE) on semi-insulating (SI) InP substrate we have fabricated waveguide-integrated pin-photodiodes working on the principle of evanescent field coupling. A 3 dB cutoff frequency of 9.6 GHz has been found in a 50-OMEGA system. The 100-mu-m long diodes exhibit a capacitance of < 0.1 pF at -5V bias. In addition design criteria are given to improve the speed of the devices.
引用
收藏
页码：344 / 345
页数：2
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